Search results for "Surface acoustic waves"

showing 4 items of 4 documents

Integrated photonic routers driven by surface acoustic waves

2016

Durante la segunda mitad del siglo XX se produjo un desarrollo excepcional de la capacidad de transmitir y procesar información electrónicamente. Esto fue debido en parte a la capacidad de integrar en un único substrato una gran cantidad de transistores, que son las unidades fundamentales de procesamiento de datos. Este comportamiento quedó resumido en la ley de Moore, que predecía que el número de transistores integrados se duplicaría cada 24 meses. Esta tendencia, que se ha mantenido hasta la actualidad con transistores de tamaño nanométrico, no puede continuar indefinidamente. Uno de los problemas fundamentales reside en la capacidad limitada para disipar el calor que generan los disposi…

Surface acoustic waves:FÍSICA [UNESCO]Multimode interference couplersIntegrated photonicsUNESCO::FÍSICAAcousto-optical modulator
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Polarized recombination of acoustically transported carriers in GaAs nanowires

2012

: The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation d…

Materials sciencePhotoluminescenceSurface acoustic wavesNanowireNanochemistryNanotechnologyElectronEnginyeria acústicaCharge transportMaterials Science(all)Spin transportPolarizationGeneral Materials SciencePhotoluminescenceWurtzite crystal structureNano Expressbusiness.industryNanowiresSurface acoustic waveGaAsCiència dels materialsPolarization (waves)Condensed Matter PhysicsPiezoelectricityOptoelectronicsbusinessNanoscale Research Letters
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Optical Properties of III-V Nanowires and Their Application for Charge Transport and Single-Photon Emission

2012

This work covers the optical characterization of III-V semiconductor nanowires and their application for charge transport and for single-photon emission. InAs nanowires have been investigated by Raman scattering and PL spectroscopy. The possibility to grow nanowires with a crystal structure different from its bulk counterpart has aroused a lot of interest in their optical and electronic properties. Here, the optical phonon modes of wurtzite InAs nanowires have been studied by polarized Raman scattering. For the first time, Raman measurements on a single InAs nanowire have revealed the A1(TO) and E2h optical phonon modes of the wurtzite structure. Additional resonant Raman scattering experim…

nanowires; photoluminescence; InAs; GaAs; Raman; SAW; surface acoustic waves; charge transportUNESCO::FÍSICA::Física del estado sólido ::SemiconductoresSAWGaAsPhysics::Opticssurface acoustic wavesCondensed Matter::Mesoscopic Systems and Quantum Hall Effectcharge transportCondensed Matter::Materials SciencenanowiresInAs:FÍSICA::Física del estado sólido ::Semiconductores [UNESCO]photoluminescenceRaman
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Modulation of the electronic properties of GaN films by surface acoustic waves

2003

We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …

PhotoluminescenceMaterials scienceIII-V semiconductorsSurface acoustic wavesBand gapExcitonRadiation quenchingGeneral Physics and AstronomySemiconductor thin filmsCondensed Matter::Materials Science:FÍSICA [UNESCO]IonizationPiezoelectric semiconductorsPhotoluminescenceQuenchingbusiness.industryUNESCO::FÍSICAWide-bandgap semiconductorGallium compoundsAcoustic waveCondensed Matter::Mesoscopic Systems and Quantum Hall EffectWide band gap semiconductorsGallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Surface acoustic waves ; Semiconductor thin films ; Photoluminescence ; Radiation quenching ; Piezoelectric semiconductors ; Excitons ; Energy gapEnergy gapSapphireOptoelectronicsExcitonsbusiness
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